VS-MBR350 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
VS-MBR350 Datasheet PDF : 6 Pages
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VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3
www.vishay.com
Vishay Semiconductors
100
10
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
93450_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
TJ = 150 °C
10
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
93450_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
160
140
120
DC
100
80
60
40
Square wave (D = 0.50)
80% Rated VR applied
20 see note (1)
0
0
1
2
3
4
5
93450_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
3
2.5
2
RMS Limit
1.5
1
0.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DDCC
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
93450_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
T = 25 °C
J
100
100
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
0
40
80
120
160
93450_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
10
100
1000
10 000
93450_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 13-Oct-11
3
Document Number: 93450
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