MBRB1045 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MBRB1045 Datasheet PDF : 6 Pages
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MBRB1045, MBRD1045
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared!
• Pb−Free Packages are Available
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 1.7 grams for D2PAK (approximately)
0.4 grams for DPAK (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
45
V
VRWM
VR
Average Rectified Forward Current
IF(AV)
10
A
(Rated VR) TC = 135°C
Peak Repetitive Forward Current
IFRM
20
A
(Rated VR, Square Wave, 20 kHz)
TC = 135°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
IFSM
150 (MBRB)
A
70 (MBRD)
Operating Junction and Storage
Temperature Range (Note 1)
TJ, Tstg − 65 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 6
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
1
4
3
MARKING DIAGRAM
4
AY WW
1
3
D2PAK
CASE 418B
PLASTIC
MBRB1045G
AKA
A
Y
WW
MBRB1045
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
4
MARKING DIAGRAM
12
3
DPAK
CASE 369C
Y
WW
B1045
G
YWW
B10
45G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBRB1045/D
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