MC100EPT25DT View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MC100EPT25DT

−3.3V / −5VDifferential ECL to +3.3V LVTTL Translator

ON Semiconductor 

MC100EPT25

Table 3. MAXIMUM RATINGS

Symbol

Parameter

Condition 1

Condition 2

Rating

Unit

VCC

Positive Power Supply

GND = 0 V

VEE

Negative Power Supply

GND = 0 V

VIN

Input Voltage

GND = 0 V

IBB

VBB Sink/Source

TA

Operating Temperature Range

Tstg

Storage Temperature Range

qJA

Thermal Resistance (Junction−to−Ambient) 0 lfpm

500 lfpm

VEE = −5.0 V

VCC = +3.3 V

8 SOIC

8 SOIC

3.8

−6

0 to VEE

± 0.5

−40 to +85

−65 to +150

190

130

V

V

V

mA

°C

°C

°C/W

°C/W

qJC

Thermal Resistance (Junction−to−Case)

Standard Board

qJA

Thermal Resistance (Junction−to−Ambient) 0 lfpm

500 lfpm

8 SOIC

8 TSSOP

8 TSSOP

41 to 44

185

140

°C/W

°C/W

°C/W

qJC

Thermal Resistance (Junction−to−Case)

Standard Board

qJA

Thermal Resistance (Junction−to−Ambient) 0 lfpm

500 lfpm

8 TSSOP

DFN8

DFN8

41 to 44

129

84

°C/W

°C/W

°C/W

Tsol

Wave Solder

Pb <2 to 3 sec @ 248°C

Pb−Free <2 to 3 sec @ 260°C

265

°C

265

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Table 4. NECL DC CHARACTERISTICS VCC = 3.3 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V (Note 2)

−40°C

25°C

85°C

Symbol

Characteristic

Min Typ Max Min Typ Max Min Typ Max Unit

IEE

VIH

VIL

VBB

VIHCMR

Power Supply Current

Input HIGH Voltage Single−Ended

Input LOW Voltage Single−Ended

Output Voltage Reference

Input HIGH Voltage Common Mode

Range (Note 3)

8.0

16

25

8.0

16

25

8.0

16

25 mA

−1225

−880 −1225

−880 −1225

−880 mV

−1945

−1625 −1945

−1625 −1945

−1625 mV

−1525 −1425 −1325 −1525 −1425 −1325 −1525 −1425 −1325 mV

VEE + 2.0

0.0

VEE + 2.0

0.0

VEE + 2.0

0.0 V

IIH

Input HIGH Current

IIL

Input LOW Current

150

150

150 mA

0.5

0.5

0.5

mA

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

2. Input parameters vary 1:1 with GND.

3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential

input signal.

Table 5. TTL OUTPUT DC CHARACTERISTICS VCC = 3.3 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V; TA = −40°C to 85°C

Symbol

Characteristic

Condition

Min

Typ

Max

Unit

VOH

VOL

ICCH

ICCL

Output HIGH Voltage

Output LOW Voltage

Power Supply Current

Power Supply Current

IOH = −3.0 mA

IOL = 24 mA

2.2

V

0.5

V

6

10

14

mA

7

12

17

mA

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

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