MC33151VDR2G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MC33151VDR2G Datasheet PDF : 12 Pages
| |||
MC34151, MC33151
Vin
+
Rg(on)
Rg(off)
IB
+
0
-
+
Vin
Base Charge
Removal
C1
In noise sensitive applications, both conducted and radiated EMI can
be reduced significantly by controlling the MOSFET's turn-on and
turn-off times.
Figure 23. Controlled MOSFET Drive
The totem-pole outputs can furnish negative base current for enhanced
transistor turn-off, with the addition of capacitor C1.
Figure 24. Bipolar Transistor Drive
VCC = 15 V
4.7 0.1
+
6
+
+-
+
5.7V
+
2
330pF
+
4
+
6.8 10
7
+
1N5819
+
47
+ VO ≈ 2.0 VCC
+
6.8 10
5
+
1N5819
47
+
- VO ≈ - VCC
3
10k
The capacitor's equivalent series resistance limits the Drive Output Current
to 1.5 A. An additional series resistor may be required when using tantalum or
other low ESR capacitors.
Figure 25. Dual Charge Pump Converter
Output Load Regulation
IO (mA)
0
1.0
10
20
30
50
+VO (V)
27.7
27.4
26.4
25.5
24.6
22.6
−VO (V)
−13.3
−12.9
−11.9
−11.2
−10.5
−9.4
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