MC33152D View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MC33152D

High Speed Dual MOSFET Drivers

ON Semiconductor 

MC34152, MC33152, NCV33152

IB

+

Vin

0

−

Rg(on)

Rg(off)

Vin

Base

Charge

Removal

C1

In noise sensitive applications, both conducted and radiated EMI can

be reduced significantly by controlling the MOSFET’s turn−on and

turn−off times.

Figure 23. Controlled MOSFET Drive

VCC = 15V

47 0.1

+6

+

−

+

5.7V

2

VCC

10k

2N3904

4

330

100k

pF

3

The totem−pole outputs can furnish negative base current for

enhanced transistor turn−off, with the addition of capacitor C1.

Figure 24. Bipolar Transistor Drive

7

6.8 10

+

1N5819

+

47

+ VO ≈ 2 .0VCC

5

6.8 10

+

1N5819

− VO ≈ −VCC

47 +

The capacitor’s equivalent series resistance limits the Drive Output Current to 1.5 A. An

additional series resistor may be required when using tantalum or other low ESR capacitors.

Figure 25. Dual Charge Pump Converter

Output Load Regulation

IO (mA)

0

1.0

10

20

30

50

+VO (V)

27.7

27.4

26.4

25.5

24.6

22.6

−VO (V)

−13.3

−12.9

−11.9

−11.2

−10.5

−9.4

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