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MC74HC1G14DFT2G(2014) View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MC74HC1G14DFT2G
(Rev.:2014)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC74HC1G14DFT2G Datasheet PDF : 6 Pages
1 2 3 4 5 6
MC74HC1G14
DC ELECTRICAL CHARACTERISTICS
VCC
TA = 25_C
TA v 85_C *55_C v TA v 125_C
Symbol
Parameter
Test Conditions (V) Min Typ Max Min Max
Min
Max
Unit
VT+ Positive Threshold
Voltage
3.0 1.85 2.0 2.20
2.20
4.5 2.86 3.0 3.15
3.15
5.5 3.50 3.6 3.85
3.85
2.20
V
3.15
3.85
VTNegative Threshold
Voltage
3.0 0.9 1.5 1.65 0.9
0.9
V
4.5 1.35 2.3 2.46 1.35
1.35
5.5 1.65 2.9 3.05 1.65
1.65
VH Hysteresis Voltage
3.0 0.30 0.57 1.20 0.30 1.20
0.30
4.5 0.40 0.67 1.40 0.40 1.40
0.40
5.5 0.50 0.74 1.60 0.50 1.60
0.50
1.20
V
1.40
1.60
VOH
Minimum HighLevel VIN = VIH or VIL
2.0 1.9 2.0
1.9
1.9
Output Voltage
IOH = 20 mA
3.0 2.9 3.0
2.9
2.9
4.5 4.4 4.5
4.4
4.4
6.0 5.9 6.0
5.9
5.9
VIN v VT *Min
IOH = *2 mA
4.5 4.18 4.31
4.13
4.08
IOH = *2.6 mA
6.0 5.68 5.80
5.63
5.58
VOL
Maximum LowLevel VIN VT )Max
2.0
0.0 0.1
0.1
Output Voltage
IOL = 20 mA
3.0
0.0 0.1
0.1
4.5
0.0 0.1
0.1
6.0
0.0 0.1
0.1
V
0.1
V
0.1
0.1
0.1
VIN = VIH or VIL
IOL = 2 mA
4.5
IOL = 2.6 mA
6.0
IIN
Maximum Input
VIN = 6.0 V or GND 6.0
Leakage Current
0.17 0.26
0.18 0.26
$0.1
0.33
0.33
$1.0
0.40
0.40
$1.0
mA
ICC
Maximum Quiescent VIN = VCC or GND 6.0
Supply Current
1.0
10
40
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)
TA = 25_C
TA v 85_C *55_C v TA v 125_C
Symbol
Parameter
Test Conditions
Min Typ Max Min Max
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
Maximum
VCC = 5.0 V CL = 15 pF
3.5 15
20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
Propagation Delay,
Input A or B to Y
VCC = 2.0 V CL = 50 pF
19 100
125
VCC = 3.0 V
10.5 27
35
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC = 4.5 V
7.5 20
25
VCC = 6.0 V
6.5 17
21
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tTLH,
Output Transition
VCC = 5.0 V CL = 15 pF
3
10
15
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tTHL
Time
VCC = 2.0 V CL = 50 pF
25 125
155
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC = 3.0 V
16
35
45
VCC = 4.5 V
11
25
31
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC = 6.0 V
9
21
26
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CIN
Maximum Input
Capacitance
5
10
10
Max
Unit
25
ns
155
90
35
26
20
ns
200
60
38
32
10
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Typical @ 25_C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Note 6)
10
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the noload dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.
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