TGA9092 View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
Manufacturer
TGA9092 Datasheet PDF : 4 Pages
| |||
Advance Product Information
Table I
RECOMMENDED MAXIMUM RATINGS
Symbol
V+
I+
PD
PIN
TCH
TM
TSTG
Parameter
Positive Supply Voltage
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
9V
3.5 A
25 Watts
25 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for both channels
Table II
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
VP1-14
BVGS1
BVGD1-3
Parameter
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
-1.5
-30
-30
Maximum
-0.5
-8
-8
Value
V
V
V
Table III
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol Parameter
Gp
Small-signal
Power Gain
P3dB
Output Power
@ 3dB gain
compression
Test Condition
Vd=8V, Id=800mA
F = 6 to 18 GHz
F = 6 to 9 GHz
F = 10 to 17 GHz
F = 18 Ghz
Limit
Min Nom Max
21 25 31
30 32 -
33 34 -
30 33 -
Units
dB
dBm
PAE Power Added F = 6 to 18 GHz 12 25 -
%
Efficiency
Note: RF probe data taken at 1GHz steps
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 5804 Web: www.triquint.com
Share Link: 