MCH3416 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

Manufacturer

MCH3416

N-Channel Silicon MOSFET

SANYO -> Panasonic 

MCH3416

Continued from preceding page.

Parameter

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

Qg

Qgs

Qgd

VSD

Conditions

VDS=30V, VGS=10V, ID=1.8A

VDS=30V, VGS=10V, ID=1.8A

VDS=30V, VGS=10V, ID=1.8A

IS=1.8A, VGS=0

Ratings

Unit

min

typ

max

6.4

nC

1.1

nC

1.1

nC

0.85

1.2

V

Package Dimensions

unit : mm

2167A

0.3

0.15

3

2

1

0.65

2.0

(Bottom view)

3

1

2

(Top view)

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10µs

D.C.≤1%

G

VDD=30V

ID=0.9A

RL=33.3Ω

D

VOUT

MCH3416

P.G

50Ω

S

ID -- VDS

1.8

1.6

1.4

3.0V

1.2

1.0

0.8

0.6

0.4

VGS=2.5V

0.2

0

0

0.2

0.4

0.6

0.8

1.0

1.2

Drain-to-Source Voltage, VDS -- V IT07434

RDS(on) -- VGS

400

Ta=25°C

ID=0.9A

350

300

250

200

150

100

0

2

4

6

8 10 12 14 16 18 20

Gate-to-Source Voltage, VGS -- V IT07436

4.0

VDS=10V

3.5

ID -- VGS

3.0

2.5

2.0

1.5

1.0

0.5

0

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source Voltage, VGS -- V IT07435

RDS(on) -- Ta

400

350

300

250

200

I DI=D0=.09.A9,AV, VGSG=S4=V10V

150

100

50

--60 --40 --20 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT07437

No.7996-2/4

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