MCH3421 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

Manufacturer

MCH3421

N-Channel Silicon MOSFET

SANYO -> Panasonic 

MCH3421

Continued from preceding page.

Parameter

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

Qg

Qgs

Qgd

VSD

Conditions

VDS=50V, VGS=10V, ID=0.8A

VDS=50V, VGS=10V, ID=0.8A

VDS=50V, VGS=10V, ID=0.8A

IS=0.8A, VGS=0

Ratings

Unit

min

typ

max

4.8

nC

0.9

nC

0.9

nC

0.86

1.2

V

Package Dimensions

unit : mm

2167A

0.3

0.15

3

2

1

0.65

2.0

(Bottom view)

3

1

2

(Top view)

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10µs

D.C.≤1%

G

VDD=50V

ID=0.4A

RL=125Ω

D

VOUT

MCH3421

P.G

50Ω

S

ID -- VDS

1.0

0.8

VGS=3.0V

0.6

0.4

0.2

0

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Drain-to-Source Voltage, VDS -- V IT05995

RDS(on) -- VGS

2.0

Ta=25°C

1.8

ID=0.4A

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0 2 4 6 8 10 12 14 16 18 20

Gate-to-Source Voltage, VGS -- V IT05997

2.0

VDS=10V

1.8

ID -- VGS

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source Voltage, VGS -- V IT05996

RDS(on) -- Ta

1.8

1.6

1.4

1.2

1.0

0.8

0.6

I D=I0D.4=A0.,4VAG, VS=G4SV=10V

0.4

0.2

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT05998

No.7997-2/4

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