MCH3475(2007) View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

Manufacturer

MCH3475
(Rev.:2007)

N-Channel Silicon MOSFET

SANYO -> Panasonic 

MCH3475

Continued from preceding page.

Parameter

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

VDS=10V, VGS=10V, ID=1.8A

VDS=10V, VGS=10V, ID=1.8A

VDS=10V, VGS=10V, ID=1.8A

IS=1.8A, VGS=0V

Ratings

Unit

min

typ

max

3.4

ns

3.6

ns

10.5

ns

4.0

ns

2.0

nC

0.33

nC

0.29

nC

0.86

1.2

V

Package Dimensions

unit : mm (typ)

7019A-003

2.0

0.15

3

0 to 0.02

1

2

0.65

0.3

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10µs

D.C.≤1%

G

VDD=15V

ID=0.9A

RL=16.7Ω

D

VOUT

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

P.G

50Ω

MCH3475

S

ID -- VDS

1.8

1.6

1.4

1.2

1.0

0.8

3.5V

0.6

0.4

3.0V

0.2

VGS=2.5V

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source Voltage, VDS -- V IT13107

2.0

VDS=10V

1.8

ID -- VGS

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source Voltage, VGS -- V IT13108

No. A1000-2/4

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