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MCIMX258CJM4 View Datasheet(PDF) - Freescale Semiconductor

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Description
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MCIMX258CJM4 Datasheet PDF : 153 Pages
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3 Electrical Characteristics
This section provides the device-level and module-level electrical characteristics for the i.MX25.
3.1 i.MX25 Chip-Level Conditions
This section provides the chip-level electrical characteristics for the IC.
3.1.1 DC Absolute Maximum Ratings
Table 5 provides the DC absolute maximum operating conditions.
CAUTION
• Stresses beyond those listed under Table 5 may cause permanent
damage to the device.
• Exposure to absolute-maximum-rated conditions for extended periods
may affect device reliability.
Table 5 gives stress ratings only—functional operation of the device is
not implied beyond the conditions indicated in Table 6.
Table 5. DC Absolute Maximum Ratings
Parameter
Supply voltage
Supply voltage (level shift i/o)
ESD damage immunity:
Human body model (HBM)
Charge device model (CDM)
Machine model (MM)
Input voltage range
Storage temperature range
Symbol
QVDD
VDDIOmax
Vesd
VImax
Tstorage
Min.
–0.5
–0.5
–0.5
–40
Max.
1.52
3.6
2500
400
200
NVDD + 0.3
105
Units
V
V
V
V
oC
3.1.2 DC Operating Conditions
Table 6 provides the DC recommended operating conditions.
Table 6. DC Operating Conditions
Parameter
Core supply voltage (at 266 MHz)
Core supply voltage (at 400 MHz)
Coin battery1
BAT_VDD
I/O supply voltage, GPIO
NFC,CSI,SDIO
Symbol
QVDD
QVDD
VDD_BAT
NVDD_GPIO1
Min.
1.15
1.38
1.15
Typ.
1.34
1.45
Max.
1.52
1.52
1.55
Units
V
V
V
1.75
3.6
V
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 9
Freescale Semiconductor
11

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