MG600Q1US61 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

MG600Q1US61

TOSHIBA IGBT Module Silicon N Channel IGBT

Toshiba 

10000

Short circuit soa

1000

100

VGE = ±15 V

tw = 10 ms

Tj = 125°C

10

0

200 400 600

800 1000 1200 1400

Collector-emitter voltage VCE (V)

MG600Q1US61

7

2002-10-04

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