BSS52 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BSS52 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistors
Product specification
BSS50; BSS51; BSS52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-39 metal package.
PNP complements: BSS61 and BSS62.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
2
3
MAM311
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSS50
BSS51
BSS52
VCES
collector-emitter voltage
BSS50
BSS51
BSS52
IC
collector current
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
CONDITIONS
MIN.
open emitter
VBE = 0
Tamb ≤ 25 °C
Tcase ≤ 25 °C
IC = 500 mA; VCE = 10 V
IC = 500 mA; VCE = 5 V; f = 100 MHz
−
−
−
−
−
−
−
−
−
2 000
−
TYP.
−
−
−
−
−
−
−
−
−
−
200
MAX. UNIT
60
V
80
V
90
V
45
V
60
V
80
V
1
A
0.8
W
5
W
−
−
MHz
1997 Sep 03
2
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