MMBFJ177LT1G View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MMBFJ177LT1G

JFET Chopper P−Channel − Depletion

ON Semiconductor 

MMBFJ177LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc)

Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc)

Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc)

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current (VGS = 0, VDS = 15 Vdc) (Note 2)

Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc)

Drain Source On Resistance (ID = 500 mAdc)

Input Capacitance

Reverse Transfer Capacitance

VDS = 0, VGS = 10 Vdc

f = 1.0 MHz

2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.

Symbol

Min

Max

Unit

V(BR)GSS

30

IGSS

−

VGS(off)

0.8

−

Vdc

1.0

nAdc

2.5

Vdc

IDSS

ID(off)

rDS(on)

Ciss

Crss

1.5

20

mAdc

−

1.0

nAdc

−

300

W

−

11

pF

−

5.5

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