MMBFJ270 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
MMBFJ270 Datasheet PDF : 5 Pages
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MMBFJ270
P-Channel Switch
August 2008
Features
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
Absolute Maximum Ratings (Note1) Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG
Drain-Gate Voltage
-30
VGS
Gate-Source Voltage
30
IGF
Forward Gate Current
50
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
G
S
D
SOT-23
Mark : 61S
Units
V
V
mA
°C
Thermal Characteristics
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient (Note2)
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Value
225
1.8
556
Units
mW
mW/°C
°C/W
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics (Note3)
V(BR)GSS
Gate-Source Breakdwon Voltage
IGSS
Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
On Characteristics (Note3)
IG = 1.0µA, VDS = 0
VGS = 20V, VDS = 0
VDS = -15V, ID = -1.0nA
IDSS
Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0
gfs
Forward Transferconductance
VGS = 0V, VDS = 15V, f = 1.0kHz
goss
Common- Source Output Conduc- VGS = 0V, VDS = 15V, f = 1.0kHz
tance
Note3 : Short duration test pulse used to minimize self-heating effect.
MIN
30
0.5
-2.0
6000
MAX
Units
V
200
pA
2.0
V
-15
15000
200
mA
µmhos
µmhos
© 2008 Fairchild Semiconductor Corporation
MMBFJ270 Rev. B
1
www.fairchildsemi.com
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