BSM400GB60DN2 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSM400GB60DN2

IGBT Power Module

Infineon Technologies 

BSM 400 GB 60 DN2

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 400 A

20

V

VGE 16

14

100 V

300 V

12

10

8

6

4

2

0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 µC 3.2

QGate

Reverse biased safe operating area

ICpuls = f(VCE) , Tj = 150°C

parameter: VGE = 15 V

2.5

Typ. capacitances

C = f (VCE)

parameter: VGE = 0 V, f = 1 MHz

10 2

nF

C

10 1

Ciss

Coss

10 0

Crss

10 -1

0

5 10 15 20 25 30 V 40

VCE

Short circuit safe operating area

ICsc = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH

12

ICpuls/IC

1.5

1.0

0.5

ICsc/IC

di/dt = 500A/µs

8

1500A/µs

2500A/µs

6

4

° allowed numbers of

short circuit: <1000

° time between short

2 circuit: >1s

0.0

0

100 200 300 400 500 600

V 800

VCE

0

0 100 200 300 400 500 600 V 800

VCE

Semiconductor Group

6

Apr-25-1997

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