BSM 400 GB 60 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω
10 4
ns
t
10 3
tdoff
tf
tr
tdon
10 2
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, IC = 400 A
10 4
ns
t
10 3
10 2
tdoff
tf
tr
tdon
10 1
0
200
400
600
A
1000
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω
10 1
0
10
Ω
30
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300V, VGE = ± 15 V, IC = 400 A
120
mWs
E
120
Eoff
mWs
E
80
80
60
60
40
40
Eon
20
20
0
0
0
200
400
600
A
1000
0
IC
Semiconductor Group
7
Eoff
Eon
10
Ω
30
RG
Apr-25-1997