2N6055 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
2N6055 Datasheet PDF : 3 Pages
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COMPLEMENTARY POWER DARLINGTON
The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and
are mounted in Jedec TO-3 metal case.
They are intended for use in power linear and switching applications.
The complementary NPN type is the 2N6055
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
IB
PTOT
TJ
TS
Ratings
#Collector-Emitter Voltage
IB=0
Collector-Base Voltage
IE=0
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation
Junction Temperature
Continuous
Peak
@ TC = 25°
Storage Temperature
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
2N6053
2N6055
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
2N6053
2N6055
Value
60
Unit
V
60
V
5.0
V
8
A
16
120
mA
100
Watts
°C
-65 to +200
°C
Value
1.75
Unit
°C/W
1
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