MPSW01AG View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MPSW01AG

One Watt High Current Transistors

ON Semiconductor 

1.0

TJ = 25°C

0.8

VBE(sat) @ IC/IB = 10

MPSW01, MPSW01A

-0.8

-1.2

0.6

VBE(on) @ VCE = 1.0 V

0.4

-1.6

qVB FOR VBE

-2.0

0.2

VCE(sat) @ IC/IB = 10

0

1.0 2.0

5.0 10 20 50 100 200 500 1000

IC, COLLECTOR CURRENT (mA)

Figure 3. “ON” Voltages

-2.4

-2.8

1.0 2.0

5.0 10 20 50 100 200 500 1000

IC, COLLECTOR CURRENT (mA)

Figure 4. Temperature Coefficient

300

80

TJ = 25°C

200

60

100

70

VCE = 10 V

50

TJ = 25°C

f = 20 MHz

30

10

20

50

100 200

1000

IC, COLLECTOR CURRENT (mA)

Figure 5. Current Gain — Bandwidth Product

40

20

0

Cobo

Cibo

Cibo

Cobo

5.0

10

15

20

25

1.0

2.0

3.0

4.0

5.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

1k

1.0 s

1.0 ms 100 ms

500

200

100

50

20

10

1.0

TA = 25°C TC = 25°C

DUTY CYCLE ≤ 10%

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPSW01

MPSW01A

2.0

5.0

10

20 30 40

VCE, COLLECTOR-EMITTER VOLTAGE (V)

Figure 7. Active Region — Safe Operating Area

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