MT48LC1M16A1TG-6S View Datasheet(PDF) - Micron Technology
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Description
Manufacturer
MT48LC1M16A1TG-6S Datasheet PDF : 51 Pages
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ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD, VDDQ Supply
Relative to VSS ................................ -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS ................................ -1V to +4.6V
Operating Temperature, TA (ambient) -40°C to +85°C
Storage Temperature (plastic) .......... -55°C to +150°C
Power Dissipation .................................................. 1W
16Mb: x16
IT SDRAM
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 6) (-40°C ≤ TA ≤ +85°C; VDD, VDDQ = +3.3V ±0.3V)
PARAMETER/CONDITION
SYMBOL
SUPPLY VOLTAGE
VDD, VDDQ
INPUT HIGH VOLTAGE: Logic 1; All inputs
VIH
INPUT LOW VOLTAGE: Logic 0; All inputs
VIL
INPUT LEAKAGE CURRENT:
Any input 0V ≤ VIN ≤ VDD
II
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V ≤ VOUT ≤ VDDQ
IOZ
OUTPUT LEVELS:
VOH
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOL
MIN
3
2.2
-0.3
MAX UNITS NOTES
3.6
V
VDD + 0.3 V
22
0.8
V
22
-5
5
µA
-10
10
µA
2.4
–
V
–
0.4
V
IDD SPECIFICATIONS AND CONDITIONS
(Notes: 1, 6, 11, 13) (-40°C ≤ TA ≤ +85°C; VDD, VDDQ = +3.3V ±0.3V)
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE; tRC = tRC (MIN);
CAS latency = 3
STANDBY CURRENT: Power-Down Mode;
CKE = LOW; All banks idle
STANDBY CURRENT: Active Mode; CS# = HIGH;
CKE = HIGH; All banks active after tRCD met;
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active, CAS latency = 3
AUTO REFRESH CURRENT: tRC = 15.625µs; CAS latency = 3;
CS# = HIGH; CKE = HIGH
SYMBOL -6
IDD1
145
IDD2
2
IDD3
45
IDD4
140
IDD5
45
SELF REFRESH CURRENT: CKE ≤ 0.2V
IDD6
1
MAX
-7
140
2
40
130
40
1
-8A UNITS NOTES
135 mA 3, 18,
19, 26
2
mA 26
35 mA 3, 12,
19, 26
100 mA 3, 18,
19, 26
35 mA 3, 12,
18, 19,
26
1
mA
4
16Mb: x16 IT SDRAM
16MSDRAMx16IT.p65 – Rev. 5/99
30
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999, Micron Technology, Inc.
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