MTD9N10E1(2005) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MTD9N10E1 Datasheet PDF : 12 Pages
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MTD9N10E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
100
−
−
103
−
Vdc
−
mV/°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
µAdc
−
−
10
−
−
100
−
−
100
nAdc
2.0
−
4.0
Vdc
−
6.0
−
mV/°C
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 4.5 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 9.0 Adc)
(ID = 4.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 4.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 50 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 80 Vdc, ID = 9.0 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1)
(IS = 9.0 Adc, VGS = 0 Vdc)
(IS = 9.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 9.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
−
0.17
0.25
Ohm
Vdc
−
−
2.43
−
−
2.40
4.0
−
−
mhos
−
610
1200
pF
−
176
400
−
14
30
−
8.8
20
ns
−
28
60
−
16
30
−
4.8
10
−
14
21
nC
−
5.2
−
−
3.2
−
−
6.6
−
Vdc
−
0.98
1.8
−
0.9
−
−
91
−
ns
−
71
−
−
20
−
−
0.4
−
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
−
4.5
−
nH
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
−
7.5
−
nH
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