MTP33N10 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MTP33N10 Datasheet PDF : 8 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTP33N10E
90
80 TJ = 25°C
VGS = 10 V
70
9V
60
50
8V
40
7V
30
20
6V
10
5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
90
80 VDS ≥ 10 V
70
TJ = –55°C
25°C
60
50
100°C
40
30
20
10
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.09
VGS = 10 V
0.08
0.07
TJ = 100°C
0.06
0.05
25°C
0.04
0.03
– 55°C
0.02
0 6 12 18 24 30 36 42 48 54 60 66
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.053
0.051
TJ = 25°C
0.049
0.047
0.045
VGS = 10 V
0.043
0.041
0.039
15 V
0.037
5
11 17
23 29 35 41 47 53 59 65
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
1.8 ID = 16.5 A
1.6
1.4
1.2
1.0
0.8
0.6
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10000
VGS = 0 V
1000
TJ = 125°C
100°C
100
25°C
10
20 30 40 50 60 70 80 90 100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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