MTP4N40E View Datasheet(PDF) - Motorola => Freescale
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MTP4N40E Datasheet PDF : 8 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTP4N40E/D
™ Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete G
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
®
D
S
MTP4N40E
Motorola Preferred Device
TMOS POWER FET
4.0 AMPERES
400 VOLTS
RDS(on) = 1.8 OHM
CASE 221A–06, Style 5
TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
VDSS
VDGR
VGS
VGSM
400
Vdc
400
Vdc
± 20
Vdc
± 40
Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
ID
4.0
Adc
ID
3.0
IDM
14
Apk
PD
74
Watts
0.59
W/°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 4.0 Apk, L = 25 mH, RG = 25 Ω)
EAS
mJ
200
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.7
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
© MMoototroorlao,lIancT. 1M99O6S Power MOSFET Transistor Device Data
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