MTW32N20E View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

Manufacturer

MTW32N20E

TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on)= 0.075 OHM

Motorola => Freescale 

MTW32N20E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

200

—

Zero Gate Voltage Drain Current

(VDS = 200 Vdc, VGS = 0)

(VDS = 200 Vdc, VGS = 0, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IDSS

—

—

IGSS

—

ON CHARACTERISTICS*

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

—

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 32 Adc)

(ID = 16 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 16 Adc)

RDS(on)

—

VDS(on)

—

—

gFS

12

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS* ¦

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(VDS = 25 Vdc, VGS = 0,

f = 1.0 MHz)

(VDD = 100 Vdc, ID = 32 Adc,

VGS = 10 Vdc,

RG = 6.2 Ω)

(VDS = 160 Vdc, ID = 32 Adc,

VGS = 10 Vdc)

Ciss

—

Coss

—

Crss

—

td(on)

—

tr

—

td(off)

—

tf

—

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS*

Forward On–Voltage

(IS = 32 Adc, VGS = 0)

(IS = 16 Adc, VGS = 0, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

Reverse Recovery Stored Charge

(IS = 32 Adc, VGS = 0,

dIS/dt = 100 A/µs)

trr

—

ta

—

tb

—

QRR

—

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

—

Internal Source Inductance

LS

—

(Measured from the source lead 0.25″ from package to source bond pad)

* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

¦ Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

—

—

Vdc

247

—

mV/°C

µAdc

—

250

—

1000

—

100

nAdc

—

8.0

0.064

—

—

—

4.0

—

0.075

3.0

2.7

—

Vdc

mV/°C

Ohm

Vdc

mhos

3600

5000

pF

130

250

690

1000

25

50

ns

120

240

75

150

91

182

85

120

nC

12

—

40

—

30

—

Vdc

1.1

2.0

0.9

—

280

—

ns

195

—

85

—

2.94

—

µC

5.0

—

nH

13

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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