MTY10N100E View Datasheet(PDF) - Motorola => Freescale
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Description
Manufacturer
MTY10N100E Datasheet PDF : 8 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTY10N100E
20
18
TJ = 25°C
16
14
12
10
8
VGS = 10 V
6V
5V
6
4
2
4V
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
20
18
VDS ≥ 10 V
16
14
12
10
8
100°C
6
25°C
4
2
TJ = 55°C
0
2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
VGS = 10 V
2
1.6
1.2
TJ = 100°C
25°C
0.8
0.4
–55°C
0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
1.56
TJ = 25°C
1.48
1.4
1.32
VGS = 10 V
1.24
15 V
1.16
1.08
1.00
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.8
2.4
VGS = 10 V
ID = 10 A
2
1.6
1.2
0.8
0.4
0
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100000
10000
VGS = 0 V
1000
TJ = 125°C
100°C
100
10
25°C
1
0 100 200 300 400 500 600 700 800 900 1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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