MTY25N60E View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

Manufacturer

MTY25N60E

TMOS E-FET Power Field Effect Transistor

Motorola => Freescale 

MTY25N60E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250 µA)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 600 Vdc, VGS = 0 Vdc)

(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

V(BR)DSS

600

—

—

714

—

Vdc

—

mV/°C

IDSS

µAdc

—

—

10

—

—

200

IGSS

—

—

100

nAdc

VGS(th)

2

—

4

Vdc

—

7

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 12.5 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 25 Adc)

(ID = 12.5 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 12.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

(VDD = 300 Vdc, ID = 25 Adc,

VGS = 10 Vdc,

RG = 4.7 Ω)

(VDS = 480 Vdc, ID = 25 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 25 Adc, VGS = 0 Vdc)

(IS = 25 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

—

0.21

Ohm

—

5.2

—

—

Vdc

6

7

18

—

—

mhos

—

7300 10220

pF

—

700

1100

—

110

250

—

32

60

ns

—

90

175

—

170

300

—

110

200

—

240

350

nC

—

30

—

—

110

—

—

65

—

Vdc

—

0.9

1.2

—

0.8

—

Reverse Recovery Time

(See Figure 14)

(IS = 25 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

620

—

ns

—

310

—

—

310

—

—

10.42

—

µC

—

4.5

—

nH

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

—

7.5

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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