MTY55N20E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
200
—
—
250
—
Vdc
—
mV/°C
IDSS
µAdc
—
—
10
—
—
200
IGSS
—
—
100
nAdc
VGS(th)
2
—
4
Vdc
—
7
—
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 27.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 55 Adc)
(ID = 27.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 10 Vdc, ID = 27.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 100 Vdc, ID = 55 Adc,
VGS = 10 Vdc,
RG = 4.7 Ω)
(VDS = 160 Vdc, ID = 55 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 55 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
—
—
0.028 Ohm
Vdc
—
1.3
1.6
—
—
1.8
30
37
—
mhos
—
7200 10080
pF
—
1800
2520
—
460
920
—
33
66
ns
—
200
400
—
150
300
—
170
340
—
245
343
nC
—
33
—
—
128
—
—
79
—
Vdc
—
0.75
1.2
—
1.1
—
Reverse Recovery Time
(See Figure 14)
(IS = 55 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
trr
ta
tb
QRR
LD
—
310
—
ns
—
220
—
—
90
—
—
4.6
—
µC
—
4.5
—
nH
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
—
13
—
nH
2
Motorola TMOS Power MOSFET Transistor Device Data