LRS1805A View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LRS1805A

Stacked Chip 64M (x16) Flash Memory + 16M (x16) Smartcombo RAM

Sharp Electronics 

sharp

LRS1805A

2

1. Description

The LRS1805A is a combination memory organized as 4,194,304 x16 bit flash memory and 1,048,576 x16 bit Smartcombo

RAM in one package.

Features

- Power supply

• • • • 2.7V to 3.3V(Flash)

• • • • 2.7V to 3.1V(Smartcombo RAM)

- Operating temperature

• • • • -25°C to +85°C

- Not designed or rated as radiation hardened

- 72pin CSP (LCSP072-P-0811) plastic package

- Flash memory has P-type bulk silicon, and Smartcombo RAM has P-type bulk silicon

Flash Memory

- Access Time

••••

- Power supply current (The current for F-VCC pin and F-VPP pin)

Read

••••

Word write

••••

Block erase

Reset Power-Down

••••

••••

85 ns

25 mA

60 mA

30 mA

25 µA

Standby

• • • • 25 µA

- Optimized Array Blocking Architecture

Eight 4K-word Parameter Blocks

One-hundred and twenty-seven 32K-word Main Blocks

Top Parameter Location

- Extended Cycling Capability

100,000 Block Erase Cycles

(F-VPP = 1.65V to 3.3V)

1,000 Block Erase Cycles and total 80 hours (F-VPP = 11.7V to 12.3V)

- Enhanced Automated Suspend Options

Word Write Suspend to Read

Block Erase Suspend to Word Write

Block Erase Suspend to Read

(Max.)

(Max. tCYCLE = 200ns, CMOS Input)

(Max.)

(Max.)

(Max. F-RST = GND ± 0.2V,

IOUT (F-RY/BY) = 0mA)

(Max. F-CE = F-RST = F-VCC ± 0.2V)

Smartcombo RAM

- Access Time

- Cycle time

- Power Supply current

Operating current

Standby current (Data retention current)

Sleep Mode (Data non-retention current)

••••

••••

85 ns (Max.)

85 to 32,000 ns

••••

••••

••••

20 mA

80 µA

15 µA

(Max. tRC, tWC = Min.)

(Max.)

(Max.)

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