HYB39S64800AT-10 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

HYB39S64800AT-10

64Mbit Synchronous DRAM

Infineon Technologies 

HYB39S64400/800/160AT(L)

64MBit Synchronous DRAM

Absolute Maximum Ratings

Operating temperature range .........................................................................................0 to + 70 °C

Storage temperature range......................................................................................– 55 to + 150 °C

Input/output voltage .............................................................................................– 0.3 to Vdd+0.3 V

Power supply voltage VDD / VDDQ.......................................................................... – 0.3 to + 4.6 V

Power Dissipation............................................. ..........................................................................1 W

Data out current (short circuit) ................................................................................................ 50 mA

Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent

damage of the device. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

Recommended Operation and Characteristics for LV-TTL versions:

TA = 0 to 70 °C; VSS = 0 V; V V DD, DDQ = 3.3 V ± 0.3 V

Parameter

Input high voltage

Input low voltage

Output high voltage (IOUT = – 4.0 mA)

Output low voltage (IOUT = 4.0 mA)

Input leakage current, any input

(0 V < VIN < Vddq, all other inputs = 0 V)

Output leakage current

(DQ is disabled, 0 V < VOUT < Vdd)

Symbol

Limit Values

min.

max.

VIH

2.0

Vdd+0.3

VIL

– 0.3

0.8

VOH

2.4

–

VOL

–

0.4

II(L)

–5

5

Unit Notes

V 1, 2

V 1, 2

V

V

µA

IO(L)

–5

5

µA

Notes:

1. All voltages are referenced to VSS.

2. Vih may overshoot to Vdd + 2.0 V for pulse width of < 4ns with 3.3V. Vil may undershoot to

-2.0 V for pulse width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak

to DC reference.

Capacitance

TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz

Parameter

Symbol

Input capacitance (CLK)

CI1

Input capacitance

CI2

(A0-A12, BA0,BA1,RAS, CAS, WE, CS, CKE, DQM)

Input / Output capacitance (DQ)

CIO

Values

min. max.

2.5

4.0

2.5

5.0

Unit

pF

pF

4.0

6.5

pF

Semiconductor Group

14

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