HYB39S64800ATL-8 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

HYB39S64800ATL-8

64Mbit Synchronous DRAM

Infineon Technologies 

4 2. Minimum Read to Write Interval

HYB39S64400/800/160AT(L)

64MBit Synchronous DRAM

(Burst Length = 4, CAS latency = 2)

T0

T1

T2

T3

T4

T5

T6

CLK

DQM

COMMAND NOP

NOP

tDQZ

BANK A

ACTIVATE

NOP

tDQW

1 Clk Interval

READ A

WRITE A

NOP

T7

NOP

T8

NOP

CAS latency = 2

tCK2, DQ’s

Must be Hi-Z before

the Write Command

DIN A0

DIN A1

DIN A2

DIN A3

: “H” or “L”

4. 3. Non-Minimum Read to Write Interval

(Burst Length = 4, CAS latency = 2, 3

T0

T1

T2

T3

T4

T5

T6

T7

T8

CLK

DQM

COMMAND NOP

CAS latency = 2

tCK2, DQ’s

READ A

NOP

tDQZ

NOP

READ A

tDQW

NOP

WRITE B

DOUT A0

Must be Hi-Z before

the Write Command

DOUT A1

DIN B0

NOP

DIN B1

NOP

DIN B2

CAS latency = 3

tCK3, DQ’s

DOUT A0

DIN B0

DIN B1

DIN B2

: “H” or “L”

Semiconductor Group

24

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