MXD1210 View Datasheet(PDF) - Maxim Integrated
Part Name
Description
Manufacturer
MXD1210 Datasheet PDF : 9 Pages
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Nonvolatile RAM Controller
ELECTRICAL CHARACTERISTICS—Battery-Backup Mode
(VCCI < VBATT, positive edge rate at VBATT1, VBATT2 > 0.1V/µs, TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
Quiescent Current (Note 1)
Output Supply Current
CEO Output Voltage
SYMBOL
IBATT
ICCO2
CONDITIONS
VCCO, CEO open,
VCCI = 0V
MXD1210C/E
MXD1210M
VBATT - VCCO ≤ 0.2V (Notes 3, 4)
VO
Output open
MIN TYP
2
VBATT -
0.2
MAX
100
5
300
UNITS
nA
µA
µA
V
CAPACITANCE
(TA = TMIN to TMAX, unless otherwise noted.) (Note 5)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
CIN
COUT
CONDITIONS
MIN TYP MAX UNITS
5
pF
7
pF
VCC POWER TIMING CHARACTERISTICS
(VCCI = +4.75V to +5.5V, TOL = GND; or VCCI = +4.5V to +5.5V, TOL = VCCO, TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
CE Propagation Delay
CE High to Power-Fail
SYMBOL
tPD
tPF
CONDITIONS
MXD1210C
RL = 1kΩ, CL = 50pF
MXD1210E
MXD1210M
(Note 5)
MIN TYP MAX UNITS
5
10
20
5
10
22
ns
5
10
25
0
ns
TIMING CHARACTERISTICS
(VCCI < +4.75V to +5.5V, TOL = GND; or VCCI < +4.5V, TOL = VCCO, TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
Recovery at Power-Up
VCC Slew-Rate Power-Down
VCC Slew-Rate Power-Up
CE Pulse Width
SYMBOL
tREC
tF
tFB
tR
tCE
CONDITIONS
To out-of-tolerance condition
Tolerance to battery power
(Note 6)
MIN TYP MAX
2
5
20
300
10
0
1.5
Note 1: Only one battery input is required. Unused battery inputs must be grounded.
Note 2: ICCO1 is the maximum average load current the MXD1210 can supply to the memories.
Note 3: ICCO2 is the maximum average load current the MXD1210 can supply to the memories in battery-backup mode.
Note 4: CEO can sustain leakage current only in battery-backup mode.
Note 5: Guaranteed by design.
Note 6: tCE max must be met to ensure data integrity on power loss.
UNITS
ms
µs
µs
µs
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