NCP605MN33T2G(2008) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NCP605MN33T2G
(Rev.:2008)

500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection

ON Semiconductor 

NCP605, NCP606

ELECTRICAL CHARACTERISTICS

Vin = (Vout + 0.5 V) or 1.5 V, whichever is higher, Cin = 1 mF, Cout = 1 mF, for typical values TA = 25°C, for min/max values TA = −40°C to

85°C; unless otherwise noted. (Notes 9 and 10)

Parameter

Test Conditions

Symbol Min

Typ

Max Unit

Power Supply Ripple Rejection (Note 11)

Iout = 500 mA

Vout = 1.25 V

Vin − Vout = 1 V

f = 120 Hz, 0.5 VPP

f = 1 kHz, 0.5 VPP

f = 10 kHz, 0.5 VPP

PSRR

dB

−

62

−

−

55

−

−

40

−

Output Noise Voltage (Note 11)

f = 10 Hz to 100 kHz, Vout = 1.25 V

Vn

−

50

−

mVrms

Thermal Shutdown Temperature (Note 11)

TSD

−

175

−

°C

Thermal Shutdown Hysteresis (Note 11)

TSH

−

10

−

°C

7. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.

8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. Low

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

9. Maximum dropout voltage is limited to minimum input voltage Vin = 1.7 V recommended for guaranteed operation at maximum output

current.

10. Refer to application information section.

11. Values based on design and/or characterization.

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