NCV8403B(2016) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NCV8403B
(Rev.:2016)

Self-Protected Low Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8403A, NCV8403B

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max Unit

OFF CHARACTERISTICS

Drain−to−Source Clamped Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

(VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C) (Note 3)

Zero Gate Voltage Drain Current

(VDS = 32 Vdc, VGS = 0 Vdc)

(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 3)

Gate Input Current

(VGS = 5.0 Vdc, VDS = 0 Vdc)

V(BR)DSS

IDSS

IGSS

42

46

40

45

−

0.6

−

2.5

−

50

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 1.2 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

1.7

−

5.0

Static Drain−to−Source On−Resistance (Note 4)

(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)

(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)

Static Drain−to−Source On−Resistance (Note 4)

(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)

(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)

Source−Drain Forward On Voltage

(IS = 7.0 A, VGS = 0 V)

RDS(on)

RDS(on)

VSD

−

53

−

95

−

63

−

105

−

0.95

SWITCHING CHARACTERISTICS (Note 3)

Turn−ON Time (10% VIN to 90% ID)

Turn−OFF Time (90% VIN to 10% ID)

Turn−ON Time (10% VIN to 90% ID)

Turn−OFF Time (90% VIN to 10% ID)

Slew−Rate ON (20% VDS to 50% VDS)

Slew−Rate OFF (80% VDS to 50% VDS)

VIN = 0 V to 5 V, VDD = 25 V

ID = 1.0 A, Ext RG = 2.5 W

VIN = 0 V to 10 V, VDD = 25 V,

ID = 1.0 A, Ext RG = 2.5 W

Vin = 0 to 10 V, VDD = 12 V,

RL = 4.7 W

tON

tOFF

tON

tOFF

−dVDS/dtON

dVDS/dtOFF

44

84

15

116

2.43

0.83

SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)

Current Limit

VGS = 5.0 V, VDS = 10 V

ILIM

VGS = 5.0 V, TJ = 150°C (Note 3)

Current Limit

VGS = 10 V, VDS = 10 V

ILIM

VGS = 10 V, TJ = 150°C (Note 3)

Temperature Limit (Turn−off)

VGS = 5.0 Vdc (Note 3)

TLIM(off)

Thermal Hysteresis

VGS = 5.0 Vdc

DTLIM(on)

Temperature Limit (Turn−off)

VGS = 10 Vdc (Note 3)

TLIM(off)

Thermal Hysteresis

VGS = 10 Vdc

DTLIM(on)

GATE INPUT CHARACTERISTICS (Note 3)

Device ON Gate Input Current

VGS = 5 V ID = 1.0 A

IGON

VGS = 10 V ID = 1.0 A

Current Limit Gate Input Current

VGS = 5 V, VDS = 10 V

IGCL

VGS = 10 V, VDS = 10 V

Thermal Limit Fault Gate Input Current

VGS = 5 V, VDS = 10 V

IGTL

VGS = 10 V, VDS = 10 V

10

15

5.0

10

12

17

8.0

13

150

175

−

15

150

165

−

15

50

400

0.1

0.6

0.45

1.5

ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 3)

Electro−Static Discharge Capability

Human Body Model (HBM)

ESD

4000

−

Electro−Static Discharge Capability

Machine Model (MM)

ESD

400

−

3. Not subject to production testing.

4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

5. Fault conditions are viewed as beyond the normal operating range of the part.

51

Vdc

51

Vdc

mAdc

5.0

−

125 mAdc

2.2

Vdc

− mV/°C

mW

68

123

mW

76

135

1.1

V

ms

V/ms

20

Adc

15

22

Adc

18

200

°C

−

°C

185

°C

−

°C

mA

mA

mA

−

V

−

V

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