NCV8460A(2012) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NCV8460A
(Rev.:2012)

Self Protected High Side Driver with Temperature Shutdown and Current Limit

ON Semiconductor 

NCV8460A

MAXIMUM RATINGS

Value

Rating

DC Supply Voltage

Peak Transient Input Voltage

(Load Dump 51.5 V, VD = 13.5 V, ISO7637−2 pulse 5)

Input Voltage

Input Current

Output Current (Note 1)

Symbol

Min

VD

−16

Vpeak

Max

Unit

42

V

65

V

Vin

−8

8

V

Iin

−5

5

mA

Iout

−6

Internally

A

Limited

Negative Ground Current

−Ignd

−200

−

mA

Status Current

Istatus

−5

5

mA

Power Dissipation, Tc = 25°C

Ptot

1.183

W

Electrostatic Discharge

(HBM Model 100 pF / 1500 W)

Input

Status

Output

VD

DC

4

kV

3.5

kV

5

kV

5

kV

Single Pulse Inductive Load Switching Energy (Note 2)

(L = 1.8 mH, Vbat = 13.5 V; IL = 9 A, TJstart = 150°C)

EAS

100

mJ

Operating Junction Temperature

TJ

−40

+150

°C

Storage Temperature

Tstorage

−55

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.

2. Not subjected to production testing.

THERMAL RESISTANCE RATINGS

Parameter

Thermal Resistance

Junction−to−Lead

Junction−to−Ambient (min. Pad)

Junction−to−Ambient (1” square pad size, FR−4, 1 oz Cu)

Symbol

RqJL

RqJA

RqJA

Max Value

72

110.8

105.6

Unit

°C/W

°C/W

°C/W

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