ND2012L View Datasheet(PDF) - Temic Semiconductors
Part Name
Description
Manufacturer
ND2012L Datasheet PDF : 4 Pages
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ND2012L/2020L
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics (ND2012)
100
0V
–0.5 V
–1 V
80 VGS = 5 V
Output Characteristics (ND2020)
100
VGS = 2 V
0V
–0.2 V
0.2 V
80
–0.4 V
60
–1.5 V
40
20
–2 V
–2.5 V
0
0
0.4
0.8
1.2
1.6
2
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics (ND2012)
500
VDS = 10 V
TC = –55_C
400
25_C
125_C
300
60
–0.6 V
40
–0.8 V
20
–1.4 V
–1 V
–1.2 V
0
0
0.4
0.8
1.2
1.6
2
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics (ND2020)
200
VDS = 10 V
160
120
200
100
0
–4.5
25
20
–3.5
–2.5
–1.5
–0.5
VGS – Gate-Source Voltage (V)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
rDS @ ID = 20 mA, VGS = 0 V
IDSS @ VDS = 7.5 V, VGS = 0 V
0.5
1000
800
rDS(on)
15
10
600
IDSS
400
5
200
80
TC = 125_C
40
25_C
–55_C
0
–4.5
–3.5
–2.5 –1.5 –0.5
0.5
VGS – Gate-Source Voltage (V)
On-Resistance vs. DrainCurrent
25
VGS = 0 V
20
15
ND2020
10
5
ND2012
0
0
0
–1
–2
–3
–4
–5
VGS(off) – Gate-Source Cutoff Voltage (V)
Siliconix
S-52426—Rev. C, 14-Apr-97
0
10
100
1K
ID – Drain Current (mA)
3
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