NDS356P View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

NDS356P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics

-5

VGS = -10V

-6.0 -5.0

-4.5

-4

-3

-4.0

-2

-3.5

-1

-3.0

0

0

-0.5

-1

-1.5

-2

-2.5

-3

VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

1.3

ID = -1.1 A

1.2

VGS = -4.5 V

1.1

1

0.9

0.8

-50

-25

0

25

50

75

100

125

150

TJ , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation

with Temperature

-10

V DS = 10V

-8

TJ = -55°C

25

125

-6

-4

-2

0

0

-2

-4

-6

-8

VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

2

1.75

V GS = -3.5 V

1.5

1.25

-4.0

-4.5

1

0.75

0.5

0

-5.0

-6.0

-10

-1

-2

-3

-4

-5

I D , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage

3.5

VGS = 4.5V

3

2.5

2

TJ= 125°C

1.5

25°C

1

-55°C

0.5

0

-1

-2

-3

-4

-5

-6

I D , DRAIN CURRENT (A)

Figure 4. On-Resistance Variation

with Drain Current and Temperature

1.15

1.1

1.05

1

0.95

0.9

0.85

0.8

-50

-25

VDS = VGS

I D = -250µA

0

25

50

75

100 125 150

TJ , JUNCTION TEMPERATURE (°C)

Figure 6. Gate Threshold Variation

with Temperature

NDS356P Rev. E1

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