NE33284A-T1 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
NE33284A-T1 Datasheet PDF : 5 Pages
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NE33284A LINEAR MODEL
NE33284A
SCHEMATIC
0.001
GATE
CGD_PKG
RG_PKG LG_PKG LG
CHIP
RG
0.5
0.28
0.5
0.16
GGS
CCG_PKG 1e_5
0.14
CDG
0.04
CGS
0.22
CDC
0.05
RI
0.52
RD
LD
0.13
0.24
g
RDS CDS
t
0.05
f=281GHz
LD_PKG RD_PKG
0.3
0.2
DRAIN
CCD_PKG
0.1
RS
0.19
0.01
CSG_PKG
LS_PKG
0.12
RS_PKG
0.2
SOURCE
0.01
CSD_PKG
BIAS DEPENDENT MODEL PARAMETERS
Parameters
g
t
RDS
2 V, 10 mA
73 mS
5 pSec
210 ohms
2 V, 20 mA
97 mS
5 pSec
156 ohms
2 V, 30 mA
104 mS
5.5 pSec
140 ohms
UNITS
Parameter
capacitance
inductance
resistance
conductance
Units
picofarads
nanohenries
ohms
millisiemans
MODEL RANGE
Frequency: 0.1 to 20 GHz
Bias:
VDS = 2 V, ID = 10, 20, 30 mA
Date:
7/2/96
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -8/98
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