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Part Name
Description
NE713 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NEC => Renesas Technology
NE713 Datasheet PDF : 16 Pages
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NE713
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Output Power at 1 dB Gain
Compression Point
Thermal Resistance
SYMBOL
I
GSO
I
DSS
V
GS (off)
gm
NF
Ga
NF
Ga
P
o (1 dB)
R
th
MIN.
−
20
−
0.5
20
11.5
8.0
TYP.
1.0
40
−
1.1
50
0.6
14.0
1.6
9.5
14.5
MAX.
10
120
−
3.5
−
0.7
1.8
190
450
UNIT
µ
A
mA
V
mS
dB
dB
dB
dB
dBm
°C/W
°C/W
TEST CONDITIONS
V
GS
=
−
5 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
D
= 100
µ
A
V
DS
= 3 V, I
D
= 10 mA
f = 4 GHz V
DS
= 3 V
I
D
= 10 mA
f = 12 GHz
f = 12 GHz V
DS
= 3 V
I
D
= 30 mA
NE71300 Channel to case
NE71383B
PACKAGE DIMENSIONS (Unit : mm) [NE71383B]
1.88
±
0.3
1
4.0 MIN.
2
4.0 MIN.
4
3
1.0
±
0.1
1. Source
2. Drain
3. Source
4. Gate
2
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