NE76184AS View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
NE76184AS Datasheet PDF : 4 Pages
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NE76184AS
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage
V
5
VGDO
Gate to Drain Voltage
V
-5
VGSO
Gate to Source Voltage
V
-6
IDS
Drain Current
mA
IDSS
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
PT
Total Power Dissipation
mW
300
Note:
1.Operation in excess of any one of these parameters may result in
permanent damage.
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 3 V, IDS = 10 mA
FREQ.
(GHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
1.0
0.55
18.0 0.92
19
0.60
2.0
0.60
15.0 0.81
40
0.55
4.0
0.80
12.0 0.66
82
0.35
6.0
1.15
10.0 0.54
125
0.25
8.0
1.60
8.5 0.46
167
0.10
10.0
2.15
7.5 0.41
-152
0.25
12.0
2.70
6.5 0.41
-108
0.48
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
350
300
250
Infinite
Heat sink
200
150
100
Free Air
50
0
0
25 50 75 100 125 150 175 200
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
VGS
0
60
-0.2
40
-0.4
20
-0.6
0
0
1
2
3
-0.8
-1.0
4
5
Drain to Source Voltage, VDS (V)
NOISE FIGURE & ASSOCIATED GAIN vs.
DRAIN CURRENT
VDS = 3 V, f = 4 GHz
2.5
15
14
GA
2
13
12
1.5
11
NF
10
1
0.5
0
10
20
30
40
50
Drain Current, IDS (mA)
9
8
7
60
75
60
45
30
15
0
0
TRANSCONDUCTANCE vs.
DRAIN CURRENT
VDS = 3 V
20
40
60
80
100
Drain Current, IDS (mA)
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