NIS5112 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NIS5112 Datasheet PDF : 9 Pages
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NIS5112
Electronic Fuse
The NIS5112 is an integrated switch utilizing a high side N−channel
FET driven by an internal charge pump. This switch features a
MOSFET which allows for current sensing using inexpensive chip
resistors instead of expensive, low impedance current shunts.
It is designed to operate in 12 V systems and includes a robust
thermal protection circuit.
Features
• Integrated Power Device
• Power Device Thermally Protected
• No External Current Shunt Required
• Enable/Timer Pin
• Adjustable Slew Rate for Output Voltage
• 9 V to 18 V Input Range
• 30 mW Typical
• Internal Charge Pump
• ESD Ratings: Human Body Model (HBM); 4000 V
• These are Pb−Free Devices
Typical Applications
• Hard Drives
8
1
www.onsemi.com
MARKING
DIAGRAM
SOIC−8 NB
CASE 751
8
112x
AYWWG
G
1
x
= L for thermal latch off
= H for thermal auto−retry
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NIS5112D1R2G
Package
SOIC−8
Latch Off
(Pb−Free)
Shipping†
2500
Tape & Reel
8
NIS5112D2R2G
SOIC−8
2500 /
VCC
Auto−Retry Tape & Reel
(Pb−Free)
Voltage
Regulator
Charge
Pump
Thermal
Latch
Overvoltage
Clamp
Current
Limit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Current Limit
4
Source
5, 6, 7
Enable/
Timer
Voltage
Slew Rate
Enable/Timer
3
GND
1
Figure 1. Block Diagram
dV/dt
2
© Semiconductor Components Industries, LLC, 2011
1
April, 2017 − Rev. 10
Publication Order Number:
NIS5112/D
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