NLX2G04 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NLX2G04

Dual Inverter

ON Semiconductor 

NLX2G04

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)

Symbol

Parameter

TA = −555C

VCC

Test

TA = 255C

to +1255C

(V)

Condition

Min Typ Max Min Max Unit

tPLH,

tPHL

Propagation Delay, Input A to Output Y

1.65

RL = 1 MW,

CL = 15 pF

1.8 2.3 9.2 1.8

11

ns

1.8

RL = 1 MW,

1.8 4.4 7.6 1.2 8.4

CL = 15 pF

2.3−2.7

RL = 1 MW,

CL = 15 pF

1.2 3.0 5.1 1.2 5.6

3.0−3.6

RL = 1 MW,

CL = 15 pF

0.8 2.2 3.4 0.8 3.8

RL = 500 W,

CL = 50 pF

1.2 2.9 4.5 1.2 5.0

4.5−5.5

RL = 1 MW,

CL = 15 pF

0.5 1.8 2.8 0.5 3.1

RL = 500 W,

CL = 50 pF

0.8 2.3 3.6 0.8 4.0

CIN

Input Capacitance

5.5

VIN = 0 V or VCC

2.5

pF

CPD

Power Dissipation Capacitance (Note 3)

3.3

10 MHz

9

pF

5.5

VIN = 0 V or VCC

11

3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without

load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load

dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.

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