NTE2661 View Datasheet(PDF) - NTE Electronics

Part Name

Description

Manufacturer

NTE2661

Silicon NPN Transistor Horizontal Deflection Output for HDTV

NTE Electronics 

NTE2661

Silicon NPN Transistor

Horizontal Deflection Output for HDTV

Features:

D High Speed: tf = 0.15µs Typ

D High Breakdown Voltage: VCBO = 1700V

D Low Saturation Voltage: VCE(sat) = 3V Max

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V

Collector−to−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Emitter−to−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

ICBO VCB = 1700V, IE = 0

− − 1.0 mA

Emitter Cutoff Current

IEBO VEB = 5V, IC = 0

− − 10 µA

Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0

600 − − V

DC Current Gain

hFE VCE = 5V, IC = 2A

10 − 30 −

VCE = 5V, IC = 11A

4.5 − 8.5

Collector−Emitter Saturation Voltage VCE(sat) IC = 11A, IB = 2.75A

−−3V

Base−Emitter Saturation Voltage

VBE(sat) IC = 11A, IB = 2.75A

− 1.0 1.3 V

Transition Frequency

fT

VCE = 10V, IE = 0.1A

− 1.7 − MHz

Collector Output capacitance

Cob VCB = 10V, IE = 0, f = 1MHz − 290 − pF

Storage Time

Fall Time

tstg IC(peak) = 10A, IB1 = 1.8A, − 2.5 4.0 µs

tf

fH = 64kHz

− 0.15 0.3 µs

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