NTE319 View Datasheet(PDF) - NTE Electronics
Part Name
Description
Manufacturer
NTE319 Datasheet PDF : 2 Pages
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NTE319P
Silicon NPN Transistor
VHF Amp w/Forward AGC
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector Saturation Voltage
Collector–Emitter Sustaining Voltage
Current Gain–Bandwidth Product
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VCEO(sus)
fT
IC = 100µA, IE = 0
IE = 100µA, IC = 0
VCB = 20V, IE = 0
IC = 2mA, VCE = 10V
IC = 10mA, IB = 5mA
IC = 1mA, IB = 0
IC = 2mA, VCE = 10V,
f = 100MHz
Power Gain
Capacitance
Noise Figure
Gpe VBE = 2V, f = 45MHz
Ccb IE = 0, VCB = 10V, f = 1MHz
NF VBE = 2V, f = 45MHz
Min Typ Max Unit
20 – – V
3–– V
– – 50 nA
20 80 220
– – 2.75 V
20 – – V
300 – 500 MHz
27 29 – dB
– 0.13 0.22 pF
– 2.7 5.0 dB
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