NTP30N20 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NTP30N20 Datasheet PDF : 7 Pages
| |||
NTP30N20
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
200
−
−
307
Vdc
−
−
mV/°C
Zero Gate Voltage Collector Current
(VGS = 0 Vdc, VDS = 200 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 200 Vdc, TJ = 175°C)
Gate−Body Leakage Current (VGS = ± 30 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
IDSS
mAdc
−
−
5.0
−
−
125
IGSS
−
−
± 100 nAdc
VGS(th)
Vdc
2.0
2.9
4.0
−
−8.9
−
mV/°C
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 15 Adc)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 175°C)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 30 Adc)
Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
(VDS = 160 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 2 & 3)
Turn−On Delay Time
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
W
−
0.068 0.081
−
0.067 0.080
−
0.200 0.240
Vdc
−
2.0
2.5
−
20
−
Mhos
−
2335
−
pF
−
380
−
−
148
−
−
75
−
−
10
−
ns
−
12
−
Rise Time
Turn−Off Delay Time
(VDD = 100 Vdc, ID = 18 Adc,
VGS = 5.0 Vdc, RG = 2.5 W)
(VDD = 160 Vdc, ID = 30 Adc,
VGS = 10 Vdc, RG = 9.1 W)
tr
−
20
−
−
70
−
td(off)
−
40
−
−
82
−
Fall Time
tf
−
24
−
−
88
−
Gate Charge
(VDS = 160 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
(VDS = 160 Vdc, ID = 18 Adc,
VGS = 5.0 Vdc)
BODY−DRAIN DIODE RATINGS (Note 2)
Forward On−Voltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
2. Indicates Pulse Test: P. W. = 300 ms max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
Qtot
Qgs
Qgd
VSD
trr
ta
tb
QRR
−
75
100
nC
−
48
−
−
20
−
−
16
−
−
32
−
−
0.91
1.1
Vdc
−
0.80
−
−
230
−
ns
−
140
−
−
85
−
−
1.85
−
mC
http://onsemi.com
2
Share Link: 