NTP30N20 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NTP30N20

Power MOSFET 30 Amps, 200 Volts

ON Semiconductor 

NTP30N20

SAFE OPERATING AREA

1000

100

VGS = 20 V

SINGLE PULSE

TC = 25°C

10 ms

10

1

0.1

0.1

100 ms

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

1 ms

10 ms

dc

1.0

10

100

1000

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

500

ID = 30 A

400

300

200

100

0

25

50

75

100

125

150 175

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

1.0

D = 0.5

0.2

0.1

0.1 0.05

0.02

0.01

SINGLE PULSE

0.01

0.00001

0.0001

P(pk)

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

t1

READ TIME AT t1

t2

TJ(pk) − TC = P(pk) RqJC(t)

DUTY CYCLE, D = t1/t2

0.001

0.01

0.1

1.0

10

t, TIME (ms)

Figure 13. Thermal Response

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 14. Diode Reverse Recovery Waveform

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