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NX3V1T66 View Datasheet(PDF) - NXP Semiconductors.

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NX3V1T66 Datasheet PDF : 20 Pages
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NXP Semiconductors
NX3V1T66
Low-ohmic single-pole single-throw analog switch
9. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
VI
input voltage
enable input E
VSW
switch voltage
IIK
input clamping current VI < 0.5 V
ISK
switch clamping current VI < 0.5 V or VI > VCC + 0.5 V
ISW
switch current
VSW > 0.5 V or VSW < VCC + 0.5 V;
source or sink current
0.5
[1] 0.5
[2] 0.5
50
-
-
+4.6
V
+4.6
V
VCC + 0.5 V
-
mA
±50
mA
±500
mA
VSW > 0.5 V or VSW < VCC + 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
-
±750
mA
Tstg
storage temperature
Ptot
total power dissipation Tamb = 40 °C to +125 °C
65
[3] -
+150
°C
250
mW
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3] For TSSOP5 package: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 package: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
10. Recommended operating conditions
Table 6. Recommended operating conditions
Symbol Parameter
Conditions
VCC
VI
VSW
Tamb
Δt/ΔV
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
enable input E
VCC = 1.4 V to 4.3 V
Min
1.4
0
[1] 0
40
[2] -
Max
4.3
4.3
VCC
+125
200
Unit
V
V
V
°C
ns/V
[1] To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
[2] Applies to control signal levels.
NX3V1T66_5
Product data sheet
Rev. 05 — 24 March 2010
© NXP B.V. 2010. All rights reserved.
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