GS8160E32T View Datasheet(PDF) - Giga Semiconductor
Part Name
Description
Manufacturer
GS8160E32T Datasheet PDF : 25 Pages
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GS8160E18/32/36T-250/225/200/166/150/133
Simplified State Diagram with G
X
Deselect
W
R
W
R
X
First Write R
CW
CR
W
First Read X
CW
CR
W
X
R
Burst Write
CR
CW
R
W
Burst Read X
CW
CR
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 2.13 11/2004
11/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, GSI Technology
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