GLT4160M04E-60J3(2000) View Datasheet(PDF) - G-Link Technology

Part Name

Description

Manufacturer

GLT4160M04E-60J3
(Rev.:2000)

4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

G-Link Technology  

G-LINK

GLT4160M04

4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Jan 2000 (Rev. 1.3)

Features :

∗ 4,194,304 words by 4 bits organization.

∗ Fast access time and cycle time

∗ Low power dissipation.

∗ Read-Modify-Write, RAS -Only Refresh,

CAS -Before- RAS Refresh, Hidden Refresh.

∗ 2,048 refresh cycles per 32ms.

∗ Available in 300 mil 26(24) SOJ and TSOPII.

∗ 2.5V±0.2V Vcc Power Supply voltage.

∗ All inputs and Outputs are LVTTL

compatible.

∗ Extended Data-Out (EDO) Page access

cycle.

∗ Self-refresh Capability. (S-Version).

Description :

The GLT4160M04 is a high-

performance CMOS dynamic random access

memory containing 16,777,216 bits

organized in a x4 configuration. The

GLT4160M04 offers page cycle access with

Extended Data Output. The GLT4160M04

has 11 row- and 11 column-addresses, and

accepts 2048-cycle refresh in 32 ms.

The GLT4160M04 provides EDO PAGE

MODE operation which allows for fast data

access within a row-address defined

boundary, up to 2048 x 4 bits with cycle

times as short as 25ns.

HIGH PERFORMANCE

Max. RAS Access Time, (tRAC)

Max. Column Address Access Time, (tAA)

Min. Extended Data Out Page Mode Cycle Time, (tPC)

Min. Read/Write Cycle Time, (tRC)

Max. CAS Access Time (tCAC)

60

60 ns

30 ns

25 ns

104 ns

15 ns

70

70 ns

35 ns

30 ns

124 ns

20 ns

G-Link Technology

2701 Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

-1-

G-Link Technology Corporation,Taiwan

6F, No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

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