GLT4160M04E-60J3(2000) View Datasheet(PDF) - G-Link Technology
Part Name
Description
Manufacturer
GLT4160M04E-60J3 Datasheet PDF : 21 Pages
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G-LINK
GLT4160M04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Jan 2000 (Rev. 1.3)
AC Characteristics
TA = 0°C to 70°C , -20°C to 85°C VCC = 2.5 V ± 0.2V, VIH/VIL = 2.0/0.8 V, VOH/VOL = 1.6/0.6V
An initial pause of 200 µs and 8 CAS -before- RAS or RAS -only refresh cycles are required after power-up.
60
70
Parameter
Symbol Min. Max. Min. Max. Unit
Notes
Read or Write Cycle Time
Read Modify Write Cycle Time
RAS Precharge Time
RAS Pulse Width
Access Time from RAS
Access Time from CAS
Access Time from Column Address
CAS to Output Low-Z
CAS to Output High-Z
RAS Hold Time
CAS Hold Time
CAS Pulse Width
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
Row Address Set-Up Time
Row Address Hold Time
Column Address Set-Up Time
Column Address Hold Time
tRC
104
124
ns
tRWC
140
170
ns
tRP
40
50
ns
tRAS
60 10k 70 10k
ns
tRAC
60
70
ns
tCAC
15
20
ns
tAA
30
35
ns
tCLZ
3
3
ns
tCEZ
3
15
3
20
ns
tRSH
15
20
ns
tCSH
45
50
ns
tCAS
10 10k 15 10k
ns
tRCD
20
45
20
50
ns
tRAD
15
30
15
35
ns
tCRP
5
5
ns
tASR
0
0
ns
tRAH
10
10
ns
tASC
0
0
ns
tCAH
10
15
ns
1, 2, 3
1, 5, 10
1, 5, 6
7
Column Address to RAS Lead Time
tRAL
30
35
ns
Column Address Hold Time Referenced to RAS
tAR
45
50
ns
Read Command Set-Up Time
tRCS
0
0
ns
Read Command Hold Time Referenced to CAS
tRCH
0
0
Read Command Hold Time Referenced to RAS
tRRH
0
0
Write Command Set-Up Time
tWCS
0
0
Write Command Hold Time
tWCH
10
15
Write Command Pulse Width
tWP
10
15
ns
4
ns
4
ns
8, 9
ns
ns
Write Command to RAS Lead Time
tRWL
15
30
ns
Write Command to CAS Lead Time
tCWL
10
15
ns
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-6-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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