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CXD1176Q View Datasheet(PDF) - Sony Semiconductor

Part Name
Description
Manufacturer
CXD1176Q Datasheet PDF : 25 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CXD1176Q
DC characteristics
Item
Supply current
Reference pin current
Analog input capacitance
Reference resistance
(VRT to VRB)
Self-bias I
Self-bias II
Digital input voltage
Digital input current
Digital output current
(Fc = 20 MSPS, VDD = 5 V, VRB = 0.5 V, VRT = 2.5 V, Ta = 25 °C)
Conditions
Min. Typ. Max. Unit
IDD
Fc = 20 MSPS
NTSC ramp wave input
12 18 mA
IREF
4.5 6.6 8.7 mA
CIN
VIN = 1.5 V + 0.07 Vrms
11
pF
RREF
230 300 450
VRB1
VRB and VRBS are shorted
VRT1 to VRB1 VRT and VRTS are shorted
0.48 0.52 0.56
V
1.96 2.08 2.22
VRT2
VRB = AGND
VRT and VRTS are shorted
2.32
V
VIH
VDD = 4.75 to 5.25 V
VIL
Ta = –40 to +85 °C
4.0
V
1.0
IIH
VIH = VDD
VDD = max
IIL
VIL = 0V
5
µA
5
IOH
OE = VSS VOH = VDD – 0.5 V –1.1
IOL
VDD = min VOL = 0.4V
3.7
mA
IOZH
IOZL
OE = VDD
VDD = max
VOH = VDD
VOL = 0V
16
µA
16
Timing
Item
Output data delay
Tri-state output
enable time
Tri-state output
disable time
(Fc = 20 MSPS, VDD = 4.75 to 5.25 V, VRB = 0.5 V, VRT = 2.5 V, Ta = –40 to +85 °C)
Symbol
TDL
tPZH
tPZL
tPHZ
tPLZ
Conditions
Min. Typ. Max. Unit
with TTL 1 gate and 10pF load
18 30 ns
RL = 1k, CL = 20 pF
OE = 3 V 0 V
2.5
6
10 ns
RL = 1 k, CL = 20 pF
OE = 0 V 3 V
8
18 30 ns
—8—

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